Laser photochemical processing of solis surface has gathered much attentions recent year, since the laser beam defines the circuit patterns without use of the conventional photolithography process. Furthermore, the direct photochemical reaction is capable of releasing and generating atoms or reactive radicals from the source materials. The direct doping and the direct ething using ultraviolet excimer lasers are described. The interested processes to define the submicron feature size by laser doping are the contact mask process and the process using a projection irradiation system. Use of the self alignment metal deposition is a significant progress in the technology of microfabrication. The characteristics of direct etching of aluminium oxide thin film which is grown by a new digital processing is important for the use of the novel insulating thin film. Laser irradiation in short wavelength generates the surface electromagnetic waves of metals and semiconductors. Well-controlled surface grating structure is formed with combining the conventional holographic exposure system. Such a ripple formation is demonstrated in the gallium arsenide semiconductor substrate.