This paper describes the results of research on ion-assisted doping of vacuum evaporated p-type CdTe films. Ion-assisted doping at 60 eV with phosphorus gives a maximum hole density of 2 x 10¹⁷ cm^-3, but the doped films show an undesirable reduction in minority carrier diffusion length, a critical parameter in solar cell applications. The magnitude of the diffusion length depends on both the ion dose and the ion energy. To increase the diffusion length, the effects of changing the Cd/Te ratio, the use of lower energy ions down to 10 eV, and the effects associated with electron irradiation for low energy ions, were investigated. For an ion energy of 20 eV, together with electron irradiation and a Cd overpressure, p-CdTe films with p = 1 x 10¹⁷ cm^-3 were obtained with a minority-carrier diffusion length of 0.35 µm.