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Trends in Vacuum Science & Technology   Volumes    Volume 1 
Abstract
Molecular layer epitaxy
Jun-ichi Nishizawa, Hiroshi Sakuraba
Pages: 209 - 222
Number of pages: 14
Trends in Vacuum Science & Technology
Volume 1 

Copyright © 1993 Research Trends. All rights reserved

ABSTRACT
 
Surface reaction mechanism of Tri-Methyl-Gallium (TMG) on GaAs is investigated by using the quadrupole mass spectroscopy (QMS). The present QMS measurements, which is devoted only to the surface reaction, distinguish the surface reaction of TMG on {100} GaAs into two sorts. By taking into account with the QMS results of {111}Ga and {111}As surface, the surface reaction mechanism on GaAs is discussed. These results are available to the molecular layer epitaxy (MLE) of GaAs with high purity.
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