This paper reviews the gravity effect on mass transport during dissolution and growth of silicon from an indium or tin solution. “The yo-yo solute feeding method” was developed based on this effect. This method has been found to have the following unique attributes: (i) relatively low growth temperatures, (ii) the epitaxial layers of desirable thicknesses, (iii) the compensation effect of the lattice constant, (iv) the gettering effect of deep-level impurities, (v) complete suppression of autodoping. This method has been shown to be very valuable to fabricate silicon power devices.