A selectively doped AlInAs/GaInAs heterostructrue (SDH) lattice-matched to a InP substrate is key to realizing ultra-high speed devices, and Metalorganic Vapor Phase Epitaxy (MOVPE) is the most promising technology for mass production of this material. MOVPE growth of AlInAs/GaInAs SDH is first investigated, followed by a study of the correlation between the growth parameters and the electronic/optical properties of the GaInAs and AlInAs layers. The V/III ratio dependence of the residual carrier concentration for GaInAs layers is investigated. Unlike MOVPE-grown GaAs in which the carbon acceptor dominates p-n conversion when the V/III ratio varies, the GaInAs layers do not show p-n conversion because of the lack of carbon acceptors. MOVPE-grown AlInAs contains a high concentration of oxygen which creates deep levels. These levels almost dominate the residual carriers and also contribute to the generation-recombination. In order to obtain high quality AlInAs layers, the growth parameters were selected so as to minimize the oxygen concentration. An abrupt hetero-interface was grown using a high gas flow rate and was confirmed by a photoluminescence study. A SDH with an electron mobility of 12,400 cm²/ Vs at room temperature was successfully grown. This material was then used to fabricate High Electron Mobility Transistors (HEMTs) with superior performance. This study demonstrated that the MOVPE is the promising growth technology for an AlInAs/GaInAs system.