In this paper we report on the progress of supersonic molecular beam growth of semiconductor films. This technique allows for low temperature, high growth rate film deposition. Converting precursor gas enthalpy into translational kinetic energy produces an energetic beam of gas molecules. The energetic gas particles are then used for material deposition. There are several advantages that supersonic beams offer over effusive sources: narrow velocity distribution, high intensity and variability in precursor energy. The flexibility of this method allows material growth to be implemented in a number of ways. For example, film deposition has been successfully achieved by using dual supersonic beams, arcjets and single-source precursors. This has resulted in low temperature (700-900 K) elemental semiconductor film growth. In addition, compound semiconductor films such as AIN, BN, GaN, GaAs and SiC have been grown. Doping of silicon has also been demonstrated. Current research is focussed on improvement of film quality of technologically interesting materials such as group III-nitrides.