Home | My Profile | Contact Us
Research Trends Products  |   order gateway  |   author gateway  |   editor gateway  
ID:
Password:
Register | Forgot Password

Author Resources
 Author Gateway
 Article submission guidelines

Editor Resources
 Editor/Referee Gateway

Agents/Distributors
 Regional Subscription Agents/Distributors
 
Current Topics in Crystal Growth Research   Volumes    Volume 3 
Abstract
Epitaxial growth and characterization of InN and AlxIn1-xN
Qixin Guo, Hiroshi Ogawa, Akira Yoshida
Pages: 19 - 32
Number of pages: 14
Current Topics in Crystal Growth Research
Volume 3 

Copyright © 1997 Research Trends. All rights reserved

ABSTRACT
 
In this article, the microwave-excited metalorganic vapor phase epitaxy of InN and AlxIn1-xN is described. Structural properties and thermal annealing effect on the crystalline quality of InN films are presented.
Buy this Article


 
search


E-Commerce
Buy this article
Buy this volume
Subscribe to this title
Shopping Cart

Quick Links
Login
Search Products
Browse in Alphabetical Order : Journals
Series/Books
Browse by Subject Classification : Journals
Series/Books

Miscellaneous
Ordering Information Ordering Information
Downloadable forms Downloadable Forms