Home
|
My Profile
|
Contact Us
Products
|
order gateway
|
author gateway
|
editor gateway
ID:
Password:
Register
|
Forgot Password
Author Resources
Author Gateway
Article submission guidelines
Editor Resources
Editor/Referee Gateway
Agents/Distributors
Regional Subscription Agents/Distributors
Current Topics in Crystal Growth Research
→
Volumes
→
Volume 3
Abstract
Epitaxial growth and characterization of InN and Al
x
In
1-x
N
Qixin Guo, Hiroshi Ogawa, Akira Yoshida
Pages: 19 - 32
Number of pages: 14
Current Topics in Crystal Growth Research
Volume 3
Copyright © 1997 Research Trends. All rights reserved
ABSTRACT
In this article, the microwave-excited metalorganic vapor phase epitaxy of InN and Al
x
In
1-x
N is described. Structural properties and thermal annealing effect on the crystalline quality of InN films are presented.
Buy this Article
search
E-Commerce
Buy this article
Buy this volume
Subscribe to this title
Shopping Cart
Quick Links
Login
Search Products
Browse in Alphabetical Order :
Journals
Series/Books
Browse by Subject Classification :
Journals
Series/Books
Miscellaneous
Ordering Information
Downloadable Forms
Privacy
|
Legal
| © Copyright 2005 Research Trends. All rights reserved |
Contact Us