We report recent progress in the epitaxial growth of cerium dioxide (CeO₂)  thin films on silicon substrates. The structure of CeO₂/Si interfaces is precisely  studied, including the interfacial oxidation characteristics. Although CeO₂ (111) layers grow on Si(111) substrates at temperatures lower than 200°C, CeO₂ layers grown on Si(l00) substrates have (110) orientation and require higher temperature of 820°C. Electron-beam-assisted evaporation is proposed for a way to lower the growth temperature and improve crystalline quality of CeO₂ (110) layers on Si(100) substrates.