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Current Topics in Crystal Growth Research   Volumes    Volume 5 
Abstract
Low temperature epitaxial growth of II-VI compound semiconductors using synchrotron radiation as a light source
Hiroshi Ogawa, Mitsuhiro Nishio, Qixin Guo
Pages: 1 - 26
Number of pages: 26
Current Topics in Crystal Growth Research
Volume 5 

Copyright © 1999 Research Trends. All rights reserved

ABSTRACT

Results of our recent experiments relating to the synchrotron radiation (SR) excited growth of II-VI compounds using metalorganic sources are described. We discuss mainly the growth characteristics of films in addition to the characterization of the deposited films. ZnTe epitaxial layer without carbon and oxygen contamination is attainable even at room temperature using SR as a light source. The quantum yield for forming ZnTe molecules was estimated to be higher than 3%. On the other hand, the deposition of ZnSe at room temperature is achievable but the growth rate is very low compared with ZnTe deposition, probably due to low adsorption coefficient of  VI-group source. In the case of ZnTe homoepitaxial growth, near band gap luminescence can be observed even in the films grown at room temperature. The growth with alternate gas supply gives a film with a thickness profile of excellent uniformity. In this case, the growth rate becomes almost saturated at one monolayer per cycle. Through these experiments, we propose that the SR-excited growth is a powerful technique for a novel low temperature growth of compounds.

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