Titanium (Ti) deposited on thermally oxidized silicon (SiO₂) changed to preferentially (110)-oriented titanium-dioxide (TiO₂) when it was heated to temperatures of 800-1000°C in flowing oxygen gas. The surface morphology of the TiO₂ films was rough and they consisted of large crystalline grains of 0.2 ~ 0.7 μm. Titanium-dioxide films with a smooth surface morphology could be prepared by oxidizing at high temperatures in flowing oxygen gas after preheating at temperatures of 200 - 400⁰C. Titanium-silicide layer together with the TiO₂ films were formed near the interface between titanium-oxide and silicon, and they can be employed as a desirable electrode for a capacitor fabricated with the titanium-oxide films. Titanium-oxide films followed to preheat at 400°C had high dielectric constants of (20-25) ε _0, resistivities of about 4 x 10’° Ωcm, and breakdown field of around 10⁶ V/cm.