ABSTRACT

The use of chemical reactions to grow epitaxial layers of compound semiconductors can be an answer to the problems, such as cost and pollution, the actual growth techniques will encounter in the future. The growth by chemical reactions, using oxides and hydrides as reactants, is described and discussed. A particular non polluting technique in which the volatile products of the reaction does not need to be transported is developed. This is illustrated by results obtained for the growth of GaAs, InP and CdTe layers.