ABSTRACT In increasing efforts to reduce the dimensions of integrated circuits, copper is used as interconnect material in replacement of alminium and its alloys. However, because Cu significantly diffuses in Si, SiO2 and low-k dielectrics a diffusion barrier is required to avoid the degradation of the electrical contacts. Obviously, there are stringent requirements for these conducting thin films as well as for their deposition processes. The different materials and their performance evaluation are reviewed in this paper. The literature data are compeleted by our recent results on Cr-based barriers grown by MOCVD under low pressure. The most promising results are discussed.
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