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Trends in Vacuum Science & Technology   Volumes    Volume 6 
Abstract
Conducting diffusion barriers for copper metallization; state of the art and potentiality of CVD and variant processes
C. Gasquères, F. Maury
Pages: 109 - 126
Number of pages: 18
Trends in Vacuum Science & Technology
Volume 6 

Copyright © 2004 Research Trends. All rights reserved

ABSTRACT

In increasing efforts to reduce the dimensions of integrated circuits, copper is used as interconnect  material in  replacement of alminium and its alloys. However, because Cu significantly diffuses  in Si, SiO2 and low-k dielectrics a diffusion barrier is required to avoid the degradation of the electrical contacts. Obviously, there are stringent requirements for these conducting thin films as well as for their deposition processes. The different  materials and their performance evaluation are reviewed in this paper. The literature data are compeleted by our recent results on Cr-based barriers grown by MOCVD under low pressure. The most promising results are discussed.

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