ABSTRACT

Antimony based III - V semiconductor compounds have attracted a great attention for potential applications of emitters and detectors in the infrared region. The MOCVD growth of Sb-based semiconductor thin films such as GaSb, GaInSb and GaInAsSb on GaSb  substrates are presented. These films are characterized by scanning electron microprobe, X-ray diffraction and double-crystal X-ray rocking curve, photoluminescence, scanning electron microscopy and Hall measurement. Scanning electron acoustic microscopy has been developed to observe and to image internal and interface morphology in semiconductor multi-layer films. A prototype uncooled infrared photodetector of GaInAsSb/GaSb was manufactured. To estimate the potential of GaInAsSb/GaSb photodetector the computer simulation of performances of the photodetector was made, which reveal the dependence of photodetector performances on device structure and material parameters.