| 1 |
Low temperature epitaxial growth of II-VI compound semiconductors using synchrotron radiation as a light source
Pages 1 -
26
Hiroshi Ogawa, Mitsuhiro Nishio, Qixin Guo
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| 2 |
Hydrostatic instabilities in floating zone crystal growth process
Pages 27 -
42
A. Sanz, I. Martinez, J. Meseguer, J. M. Perales, N. A. Bezdenejnykh
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| 3 |
Preparation of titanium-dioxide films on silicon by solid-state reaction between titanium and silicon-dioxide in oxygen
Pages 43 -
54
Kazuhiro Nakamura, Katsuhiro Yokota
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| 4 |
Simulation of epitaxial growth: a comparison of stochastic and rate equation models
Pages 55 -
89
D. Papajova, H. Sitter
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| 5 |
Direct atomistic observation of growth and related structural dynamics of gold clusters on magnesium oxide
Pages 91 -
106
Tokushi Kizuka
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| 6 |
The conical end of a closed ampoule as a tool for investigating crystal growth from the gaseous phase
Pages 107 -
129
E. Schonherr
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| 7 |
Compound semiconductor growth by chemical reaction
Pages 131 -
139
H. Samic, J. C. Bourgoin, L. El Mir, M. Gandouzi, M. Hammadi
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| 8 |
Current trends in macromolecular crystallization
Pages 141 -
149
Naomi E. Chayen
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| 9 |
Buoyancy driven flow in a rotating low Prandtl number melt during alloy solidification
Pages 151 -
161
D. N. Riahi
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| 10 |
Vertical and lateral p-n junctions made on GaAs(n11)A substrates using only silicon dopant
Pages 163 -
182
Kazuhisa Fujita, Pablo O. Vaccaro
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| 11 |
SiC-properties and applications
Pages 183 -
192
Masato Ohmukai
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| 12 |
Activity of a growth centre formed by more than two non-parallel dislocations at constant supersaturation and temperature
Pages 193 -
196
A. Z. Bikov
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