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Current Topics in Crystal Growth Research   Volumes
Current Topics in Crystal Growth Research
Volume 2 Issue 2
Published in 1995
Table of Contents
1 Aspects of semiconductor epitaxy
Pages  231 -  281
Jun-Ichi Nishizawa
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2 Molecular beam epitaxy for silicon nanoelectronics
Pages  283 -  308
H. Baumgärtner, W. Hansch, F. Wittmann, I. Eisele
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3 Epitaxial growth of metallic superlattices using RHEED intensity oscillations
Pages  309 -  325
Yoshishige Suzuki, Hideyuki Kikuchi, Toshikazu Katayama
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4 Monte Carlo simulation of homoepitaxial growth on group IV semiconductors
Pages  327 -  344
Takaaki Kawamura
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5 Production of heterophase bicrystals by diffusion bonding
Pages  345 -  357
Michel Dupeux
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6 Phase equilibria - a fundamental for growth and processing of Y-Ba-Cu-O and related high temperature superconductors
Pages  359 -  375
G. Krabbes, W. Bieger, P. Schätzle, U. Wiesner
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7 Thin Si/Ge heterostructures: Growth, characterization and interface properties
Pages  377 -  399
J.-M. Baribeau
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8 Growth of wide band gap II-VI compound semiconductors by physical vapor transport
Pages  401 -  433
Ching-Hua Su, Yi-Gao Sha
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9 Development of mercurous halides for acousto-optic devices
Pages  435 -  444
Narsingh Bahadur Singh, Robert Mazelsky
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10 Growth of metal oxide single crystals by the skull melting technique
Pages  445 -  450
P. A. Metcalf, J. M. Honig
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11 Models for the interface between crystal and mother phase; calculation of actual bond energies at the interface, implications for growth kinetics and morphology
Pages  451 -  534
X. Y. Liu, P. Bennema
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12 Growth steps on crystal surfaces: Their observation and their interpretation
Pages  535 -  551
W. J. P. van Enckevort
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