| 1 |
Aspects of semiconductor epitaxy
Pages 231 -
281
Jun-Ichi Nishizawa
Abstract | Buy this article
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| 2 |
Molecular beam epitaxy for silicon nanoelectronics
Pages 283 -
308
H. Baumgärtner, W. Hansch, F. Wittmann, I. Eisele
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| 3 |
Epitaxial growth of metallic superlattices using RHEED intensity oscillations
Pages 309 -
325
Yoshishige Suzuki, Hideyuki Kikuchi, Toshikazu Katayama
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| 4 |
Monte Carlo simulation of homoepitaxial growth on group IV semiconductors
Pages 327 -
344
Takaaki Kawamura
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| 5 |
Production of heterophase bicrystals by diffusion bonding
Pages 345 -
357
Michel Dupeux
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| 6 |
Phase equilibria - a fundamental for growth and processing of Y-Ba-Cu-O and related high temperature superconductors
Pages 359 -
375
G. Krabbes, W. Bieger, P. Schätzle, U. Wiesner
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| 7 |
Thin Si/Ge heterostructures: Growth, characterization and interface properties
Pages 377 -
399
J.-M. Baribeau
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| 8 |
Growth of wide band gap II-VI compound semiconductors by physical vapor transport
Pages 401 -
433
Ching-Hua Su, Yi-Gao Sha
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| 9 |
Development of mercurous halides for acousto-optic devices
Pages 435 -
444
Narsingh Bahadur Singh, Robert Mazelsky
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| 10 |
Growth of metal oxide single crystals by the skull melting technique
Pages 445 -
450
P. A. Metcalf, J. M. Honig
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| 11 |
Models for the interface between crystal and mother phase; calculation of actual bond energies at the interface, implications for growth kinetics and morphology
Pages 451 -
534
X. Y. Liu, P. Bennema
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| 12 |
Growth steps on crystal surfaces: Their observation and their interpretation
Pages 535 -
551
W. J. P. van Enckevort
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