Recent advance is overviewed of analyses of homoepitaxial growth processes on group IV semiconductors by using Monte Carlo simulations for molecular beam epitaxy. Two types of surfaces are treated: one is Si(00l) and the other is Ge(111). In each case, surface step density shows periodic variations as a function of the number of deposited atoms, which is related to the intensity oscillation of reflection high energy electron diffraction. The period shows a transition from monolayer to bilayer  as the temperature increases. The cause of this transition is related to growth characteristics in each case. Common and different characteristic growth processes are discussed based on simulated results.