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Current Topics in Crystal Growth Research   Volumes    Volume 2  Issue 2
Abstract
Thin Si/Ge heterostructures: Growth, characterization and interface properties
J.-M. Baribeau
Pages: 377 - 399
Number of pages: 23
Current Topics in Crystal Growth Research
Volume 2  Issue 2

Copyright © 1995 Research Trends. All rights reserved

ABSTRACT
 
We review recent progress in the study of the interfacial properties of Si/Si1-xGex heterostructures by x-ray scattering techniques. The evolution of interfaces in Si/Si1-xGex superlattices as a function of growth temperature in the range 250-750 °C is discussed. It is shown that at 250oC the interfaces are chemically abrupt, but are highly defected and exhibit a pronounced vertically correlated physical roughness. Growth at intermediate temperatures (400-550 °C) results in structures with good crystallinity and physically smooth interfaces, but intermixed over at least two monolayers. Intermixing is also more pronounced at the Si1-xGex to Si interfaces. Higher growth temperatures (620-750 °C) further enhances the intermixing and causes undulation (100 nm length scale) of the interfaces. The interface perfection in thin (SimGen)p atomic layer superlattices is also examined. In these structures the interfaces have a width of about two monolayers and exhibit vertical correlation related to the substrate surface morphology. Interdiffusion in different types of Si/Ge heterostructures is also investigated. The measurements show that Ge diffusion exhibit a strong anisotropy. Upon annealing, diffusion causes a gradual broadening and a decrease of the Ge content of the Ge-rich regions, while sharp concentration gradients are preserved at the Si/alloy interfaces. The thickness fluctuations in these Si/Ge multilayers are also studied and are estimated about 1-2 % in thick Si/Si1-xGex superlattices and about 5% in (SimGen)p atomic layer superlattices. Finally, Ge surface segregation, involving about 2 monolayers is found in Si/Ge heterostructures.
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